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Works by G. R. Booker
16 found
Order:
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealing.G. R. Booker & W. J. Tunstall - 1966 - Philosophical Magazine 13 (121):71-83.
- Some comments on the interpretation of the ‘kikuchi-like reflection patterns’ observed by scanning electron microscopy.G. R. Booker, A. M. B. Shaw, M. J. Whelan & P. B. Hirsch - 1967 - Philosophical Magazine 16 (144):1185-1191.No categories
- Some electron diffraction contrast effects at planar defects in crystals.C. J. Humphreys, A. Howie & G. R. Booker - 1967 - Philosophical Magazine 15 (135):507-522.
- Observations on dislocation nodes in silicon.G. R. Booker & L. M. Brown - 1965 - Philosophical Magazine 11 (114):1315-1319.No categories
- (1 other version)Growth of epitaxial silicon layers by vacuum evaporation.B. A. Unvala & G. R. Booker - 1964 - Philosophical Magazine 9 (100):691-701.
- (1 other version)A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques.G. R. Booker & B. A. Joyce - 1966 - Philosophical Magazine 14 (128):301-315.No categories
- Electron microscope image profiles of planar defects in crystals.G. R. Booker & P. M. Hazzledine - 1967 - Philosophical Magazine 15 (135):523-527.No categories
- Vacuum evaporated silicon layers free from stacking faults.G. R. Booker & B. A. Unvala - 1963 - Philosophical Magazine 8 (93):1597-1598.
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour.B. A. Joyce, R. R. Bradley & G. R. Booker - 1967 - Philosophical Magazine 15 (138):1167-1187.No categories
- Surface damage on abraded silicon specimens.R. Stickler & G. R. Booker - 1963 - Philosophical Magazine 8 (89):859-876.No categories
- Two-dimensional defects in silicon after annealing in wet oxygen.G. R. Booker & R. Stickler - 1965 - Philosophical Magazine 11 (114):1303-1308.No categories
- Observations of silicon at high temperature by transmission electron microscopy.G. R. Booker & U. Valdre - 1966 - Philosophical Magazine 13 (122):421-425.No categories
- Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of Silane.G. R. Booker, B. A. Joyce & R. R. Bradley - 1964 - Philosophical Magazine 10 (108):1087-1091.No categories
- Tripyramids and associated defects in epitaxial silicon layers.G. R. Booker - 1965 - Philosophical Magazine 11 (113):1007-1020.No categories
- Investigation of epitaxial silicon layers grown in the presence of small quantities of gold.J. D. Filby, S. Nielsen, G. J. Rich, G. R. Booker & J. M. Larches - 1967 - Philosophical Magazine 16 (141):565-579.No categories
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques. IV. Additional confirmation of the induction period and nucleation mechanisms.B. E. Watts, R. R. Bradley, B. A. Joyce & G. R. Booker - 1968 - Philosophical Magazine 17 (150):1163-1167.No categories
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